Semiconducting behavior of type-I Si clathrate K8Ga8Si38.
نویسندگان
چکیده
A ternary type-I Si clathrate K(8)Ga(8)Si(38) has been revealed to be an indirect band gap semiconducting material with an energy gap (E(g)) of approximately 0.10 eV, which is much smaller than the calculated E(g) value that is 0.15 eV wider than E(g) of elemental Si with the diamond-type structure.
منابع مشابه
Synthesis, Structure, Thermoelectric Properties, and Band Gaps of Alkali Metal Containing Type I Clathrates:
A series of alkali metal containing compounds with type I clathrate structure, A8Ga8Si38 (A = K, Rb, Cs) and K8Al8Si38, were synthesized and characterized. Room temperature lattice parameters of A8Ga8Si38 (A = K, Rb, Cs) and K8Al8Si38 were determined to be 10.424916(10), 10.470174(13), 10.535069(15), and 10.48071(2) Å, respectively. The type I clathrate structure (cubic, Pm3 ̅n) was confirmed fo...
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عنوان ژورنال:
- Dalton transactions
دوره 40 16 شماره
صفحات -
تاریخ انتشار 2011